High-frequency short-pulse bias potential as a universal method of ion-beam and plasma treatment of conductive and dielectric materials using vacuum-arc and ablation plasma

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

The results of investigations of applicability of the method of high-frequency short-pulsed plasma-immersion ion implantation and (or) coating deposition using vacuum-arc and ablation plasma to conductive and dielectric substrates are presented. It is shown that ion implantation with the ion sputtering compensation by coating deposition from plasma and ion-assisted coating deposition can be realized for the metal and dielectric samples through alteration of the negative bias potential within 0-4·103 V, with the pulse repetition rate of (1- 4.4)·105 pps, pulse duration 0.5-2 μs and duty factor of 0.1-0.9. It is experimentally established that at coating deposition from ablation plasma obtained by the influence of the high-intensity ion beam (j = 3·102 A/m 2, E = 350 keV, τ = 90 ns) on the target, the micro-arc effects on the substrate surface are observed at a dc bias potential of more than -60 V. The transition to pulses of 0.5 μs duration enabled to increase the bias potential up to -4 kV. The possibility of application of the high-frequency, short-pulse bias potentials for the formation of coatings from vacuum-arc and ablation plasma with high adhesive strength and improved exploitation characteristics is discussed.

Язык оригиналаАнглийский
Название основной публикацииProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOI
СостояниеОпубликовано - 2012
Событие2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Российская Федерация
Продолжительность: 18 сен 201221 сен 2012

Другое

Другое2012 7th International Forum on Strategic Technology, IFOST 2012
СтранаРоссийская Федерация
ГородTomsk
Период18.9.1221.9.12

ASJC Scopus subject areas

  • Management of Technology and Innovation

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