Аннотация
The experiments were carried out on the high-current accelerator GIMN with 700 kV of positive pulsed voltage, wave impedance of 5 ohm and a pulse duration of 80 ns. The anode of the MID was machined from the copper block and had the shape of spherical annulus with the curvature radius of 130 mm, inner and outer annular diameters of 130 and 182 mm, respectively, and total area of 160 cm 2. The high power ion beam was obtained in B-applied extractor type diode on GIMN accelerator. The maximum achieved beam parameters are: total ion current - 50 kA; ion beam energy - 2.5 kJ.
| Язык оригинала | Английский |
|---|---|
| Название основной публикации | IEEE International Conference on Plasma Science |
| Издатель | IEEE |
| Страницы | 152 |
| Число страниц | 1 |
| Состояние | Опубликовано - 1994 |
| Событие | Proceedings of the IEEE International Conference on Plasma Science - Santa Fe, NM, USA Продолжительность: 6 июн 1994 → 8 июн 1994 |
Другое
| Другое | Proceedings of the IEEE International Conference on Plasma Science |
|---|---|
| Город | Santa Fe, NM, USA |
| Период | 6.6.94 → 8.6.94 |
ASJC Scopus subject areas
- Condensed Matter Physics
Fingerprint Подробные сведения о темах исследования «Generation and application of focused high power ion beam in the B <sub>r</sub>-applied diode». Вместе они формируют уникальный семантический отпечаток (fingerprint).
Цитировать
Bystritskii, V. M., Volkov, S. N., Lisitsyn, I. V., & Mytnikov, A. V. (1994). Generation and application of focused high power ion beam in the B
r-applied diode
В IEEE International Conference on Plasma Science (стр. 152). IEEE.