Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management

Frederic Richardeau, Francois Boige, Stephane Lefebvre

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

2 Цитирования (Scopus)

Аннотация

The silicon carbide MOSFETs tend to become the standard for high-performance medium voltage power electronics in terms of compactness and efficiency. Although the weakness of its gate-oxide and the relatively low short-circuit time capability are known limitations, this device reveals interesting unique properties. In this paper the authors explore the gate leakage-current behavior in normal and pre-damage operations as well as the conditions for obtaining an atypical and very interesting fail-to-open mode which has never been observed with silicon dies. These properties may be used for dedicated and innovative protection techniques for safer converter.

Язык оригиналаАнглийский
Название основной публикации2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018
ИздательInstitute of Electrical and Electronics Engineers Inc.
ISBN (электронное издание)9781538641927
DOI
СостояниеОпубликовано - 9 янв 2019
Опубликовано для внешнего пользованияДа
Событие2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018 - Nottingham, Великобритания
Продолжительность: 7 ноя 20189 ноя 2018

Серия публикаций

Название2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018

Конференция

Конференция2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018
СтранаВеликобритания
ГородNottingham
Период7.11.189.11.18

ASJC Scopus subject areas

  • Aerospace Engineering
  • Electrical and Electronic Engineering
  • Transportation
  • Energy Engineering and Power Technology
  • Automotive Engineering
  • Control and Optimization

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  • Цитировать

    Richardeau, F., Boige, F., & Lefebvre, S. (2019). Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management. В 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018 [8607551] (2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESARS-ITEC.2018.8607551