GaSe oxidation in air: From bulk to monolayers

Mahfujur Rahaman, Raul D. Rodriguez, Manuel Monecke, Santos A. Lopez-Rivera, Dietrich R.T. Zahn

Результат исследований: Материалы для журналаСтатьярецензирование

22 Цитирования (Scopus)


Two-dimensional (2D) van derWaals semiconductors have been the subject of intense research due to their low dimensionality and tunable optoelectronic properties. However, the stability of these materials in air is one of the important issues that needs to be clarified, especially for technological applications. Here the time evolution of GaSe oxidation from monolayer to bulk is investigated by Raman spectroscopy, photoluminescence emission, and x-ray photoelectron spectroscopy. The Raman spectroscopy study reveals that GaSe monolayers become oxidized almost immediately after exposure to air. However, the oxidation is a self-limiting process taking roughly 5 h to penetrate up to 3 layers of GaSe. After oxidation, GaSe single-layers decompose into amorphous Se which has a strong Raman cross section under red excitation. The present study provides a clear picture of the stability of GaSe in air and will guide future research of GaSe from single- to few-layers for the appropriate development of novel technological applications for this promising 2D material.

Язык оригиналаАнглийский
Номер статьи105004
ЖурналSemiconductor Science and Technology
Номер выпуска10
СостояниеОпубликовано - 1 сен 2017

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Подробные сведения о темах исследования «GaSe oxidation in air: From bulk to monolayers». Вместе они формируют уникальный семантический отпечаток (fingerprint).