Gamma degradation of light-emitting diodes based on heterostructures AlGaInP

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

10 Цитирования (Scopus)

Аннотация

Gamma degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 590 nm region. The process of degradation light output power is shown in two stages. Light-current and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells has possible to distinguished areas of weak and strong injection of electrons into the active region of the diodes by measuring light output. The value of the light output power of LEDs irradiated 60Co gamma-rays in a passive mode decreases with increasing radiation dose, while power of degradation of light output is directly proportional to dose and fluency and is inversely proportional to the operating current at which it measured. With reduction of radiation dose differences between the region of strong injection and weak injection increases. Comparison of the research results made of different semiconductor structures suggests that the stages of degradation processes is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.

Язык оригиналаАнглийский
Название основной публикацииProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOI
СостояниеОпубликовано - 2012
Событие2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Российская Федерация
Продолжительность: 18 сен 201221 сен 2012

Другое

Другое2012 7th International Forum on Strategic Technology, IFOST 2012
СтранаРоссийская Федерация
ГородTomsk
Период18.9.1221.9.12

ASJC Scopus subject areas

  • Management of Technology and Innovation

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