FRET-designed dye-sensitized solar cells to enhance light harvesting

Niyazbek Ibrayev, Evgeniya Seliverstova, Nurxat Nuraje, Aleksandr Ishchenko

Результат исследований: Материалы для журналаСтатья

10 Цитирования (Scopus)

Выдержка

Förster resonance energy transfer between the xanthene dye (donor of energy) and a new polymethine dye (acceptor of energy) was studied on the surface of TiO2 films in dye-sensitized solar cells. It was shown that the sensitization of semiconductor films by the donor-acceptor compound leads to a doubling of energy conversion efficiency in comparison to the cell due to only the polymethine dye. Measurements show that this is due to the widening of photosensitivity of the cell in the blue region of the spectrum. Increasing the total energy absorbed leads to increasing the number of generated charge carriers at the interface of TiO2 and the dyes.

Язык оригиналаАнглийский
Страницы (с-по)358-362
Число страниц5
ЖурналMaterials Science in Semiconductor Processing
Том31
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 2015
Опубликовано для внешнего пользованияДа

Отпечаток

Coloring Agents
Dyes
solar cells
dyes
Xanthenes
Lead compounds
Photosensitivity
lead compounds
Charge carriers
Energy conversion
Energy transfer
energy conversion efficiency
Conversion efficiency
photosensitivity
cells
energy
Semiconductor materials
charge carriers
energy transfer
Dye-sensitized solar cells

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Цитировать

FRET-designed dye-sensitized solar cells to enhance light harvesting. / Ibrayev, Niyazbek; Seliverstova, Evgeniya; Nuraje, Nurxat; Ishchenko, Aleksandr.

В: Materials Science in Semiconductor Processing, Том 31, № 1, 01.01.2015, стр. 358-362.

Результат исследований: Материалы для журналаСтатья

Ibrayev, Niyazbek ; Seliverstova, Evgeniya ; Nuraje, Nurxat ; Ishchenko, Aleksandr. / FRET-designed dye-sensitized solar cells to enhance light harvesting. В: Materials Science in Semiconductor Processing. 2015 ; Том 31, № 1. стр. 358-362.
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