Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

G. E. Remnev, Yu F. Ivanov, E. P. Naiden, M. S. Saltymakov, Andrey Vladimirovich Stepanov, V. F. Shtan'Ko

Результат исследований: Материалы для журналаСтатьярецензирование

7 Цитирования (Scopus)

Аннотация

Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.

Язык оригиналаАнглийский
Страницы (с-по)600-602
Число страниц3
ЖурналTechnical Physics
Том54
Номер выпуска4
DOI
СостояниеОпубликовано - апр 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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