Formation of repetitively pulsed high-intensity, low-energy silicon ion beams

Результат исследований: Материалы для журналаСтатьярецензирование

3 Цитирования (Scopus)


This paper investigates the formation of pulsed and repetitively pulsed high-intensity, low-energy silicon ion beams. The formation of a pulsed silicon plasma was carried out by a vacuum arc discharge. Polycrystalline neutron-doped silicon was used as the evaporator's cathode. A pulsed vacuum arc discharge formed a directed silicon plasma flow with a duration of approximately 350μs. On the path of plasma transportation at a distance of 35 cm from the cathode surface, a system for forming a ballistically focused ion beam was installed. When a pulsed or a repetitively pulsed negative-bias potential is applied to the extracting grid electrode in the shape of a second-order surface, it ensured the formation of a sheath, the extraction of silicon ions from the plasma, and their acceleration in the layer. The shape of the extracting electrode provided the possibility of ballistic focusing of the silicon ion beam. Repetitively pulsed generation of the bias potential provided the possibility of preliminary plasma injection into the beam drift space between the bias-potential pulses. The paper has studied the features and regularities of the pulsed (with a duration of bias pulses up to 34μs) and repetitively pulsed (at frequencies of bias pulses of 20 and 100 kHz) silicon ion beams formation with a current of up to 2 A at a maximum ion current density of 0.8 A/cm2 at bias potentials of small amplitudes (0.6–1.8 kV).

Язык оригиналаАнглийский
Номер статьи163092
ЖурналNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
СостояниеОпубликовано - 11 фев 2020

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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