Formation of nanosized particles of silicon carbide and diamonds in surface layer of silicon target during short-pulsed implantation of carbon ions

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

1 цитирование (Scopus)

Выдержка

In the paper the study results of silicon carbide and diamond nanosized particle synthesis during short-pulsed implantation of carbon ions and protons into the silicon target are presented. The experiments have been performed at the source of high-power pulsed ion beams "TEMP" based on the magnetically isolated diode with B r field. The beam parameters are the following: ion energy is 300 keV, pulse duration is 80 ns, beam contains ions of carbon and protons, ion current density is 30 A/cm 2. The plates of monocrystal silicon were used as target. After consequent action of more than 100 pulses the formation of nanosized particles SiC and nanodiamonds were observed in the surface layer of silicon. The average sizes of coherent scattering area of SiC particles and nanodiamonds were 12-16 and 8-9 nm, correspondently.

Язык оригиналаАнглийский
Название основной публикации2008 17th International Conference on High Power Particle Beams, BEAMS'08
СостояниеОпубликовано - 2008
Событие17th International Conference on High Power Particle Beams, BEAMS'08 - Xi'an, Китай
Продолжительность: 6 июл 200811 июл 2008

Другое

Другое17th International Conference on High Power Particle Beams, BEAMS'08
СтранаКитай
ГородXi'an
Период6.7.0811.7.08

Отпечаток

silicon carbides
implantation
surface layers
diamonds
carbon
silicon
ion beams
ions
protons
coherent scattering
ion currents
pulse duration
diodes
current density
single crystals
synthesis
pulses
energy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Цитировать

Formation of nanosized particles of silicon carbide and diamonds in surface layer of silicon target during short-pulsed implantation of carbon ions. / Remnev, G. E.; Ivanov, Yu F.; Naiden, E. P.; Saltymakov, M. S.; Stepanov, Andrey Vladimirovich; Shtanko, V. F.

2008 17th International Conference on High Power Particle Beams, BEAMS'08. 2008. 6202881.

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Remnev, GE, Ivanov, YF, Naiden, EP, Saltymakov, MS, Stepanov, AV & Shtanko, VF 2008, Formation of nanosized particles of silicon carbide and diamonds in surface layer of silicon target during short-pulsed implantation of carbon ions. в 2008 17th International Conference on High Power Particle Beams, BEAMS'08., 6202881, Xi'an, Китай, 6.7.08.
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abstract = "In the paper the study results of silicon carbide and diamond nanosized particle synthesis during short-pulsed implantation of carbon ions and protons into the silicon target are presented. The experiments have been performed at the source of high-power pulsed ion beams {"}TEMP{"} based on the magnetically isolated diode with B r field. The beam parameters are the following: ion energy is 300 keV, pulse duration is 80 ns, beam contains ions of carbon and protons, ion current density is 30 A/cm 2. The plates of monocrystal silicon were used as target. After consequent action of more than 100 pulses the formation of nanosized particles SiC and nanodiamonds were observed in the surface layer of silicon. The average sizes of coherent scattering area of SiC particles and nanodiamonds were 12-16 and 8-9 nm, correspondently.",
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T1 - Formation of nanosized particles of silicon carbide and diamonds in surface layer of silicon target during short-pulsed implantation of carbon ions

AU - Remnev, G. E.

AU - Ivanov, Yu F.

AU - Naiden, E. P.

AU - Saltymakov, M. S.

AU - Stepanov, Andrey Vladimirovich

AU - Shtanko, V. F.

PY - 2008

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N2 - In the paper the study results of silicon carbide and diamond nanosized particle synthesis during short-pulsed implantation of carbon ions and protons into the silicon target are presented. The experiments have been performed at the source of high-power pulsed ion beams "TEMP" based on the magnetically isolated diode with B r field. The beam parameters are the following: ion energy is 300 keV, pulse duration is 80 ns, beam contains ions of carbon and protons, ion current density is 30 A/cm 2. The plates of monocrystal silicon were used as target. After consequent action of more than 100 pulses the formation of nanosized particles SiC and nanodiamonds were observed in the surface layer of silicon. The average sizes of coherent scattering area of SiC particles and nanodiamonds were 12-16 and 8-9 nm, correspondently.

AB - In the paper the study results of silicon carbide and diamond nanosized particle synthesis during short-pulsed implantation of carbon ions and protons into the silicon target are presented. The experiments have been performed at the source of high-power pulsed ion beams "TEMP" based on the magnetically isolated diode with B r field. The beam parameters are the following: ion energy is 300 keV, pulse duration is 80 ns, beam contains ions of carbon and protons, ion current density is 30 A/cm 2. The plates of monocrystal silicon were used as target. After consequent action of more than 100 pulses the formation of nanosized particles SiC and nanodiamonds were observed in the surface layer of silicon. The average sizes of coherent scattering area of SiC particles and nanodiamonds were 12-16 and 8-9 nm, correspondently.

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