Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation

Andrey Kokhanenko, Alexander Korotaev, Alexander Voitsekhovskii, Ivan Grushin, Mikkail Opekunov, Gennady Remnev

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

1 Цитирования (Scopus)

Аннотация

An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.

Язык оригиналаАнглийский
Название основной публикацииProceedings of SPIE - The International Society for Optical Engineering
ИздательSociety of Photo-Optical Instrumentation Engineers
Страницы274-283
Число страниц10
Том3881
СостояниеОпубликовано - 1999
СобытиеProceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA
Продолжительность: 22 сен 199923 сен 1999

Другое

ДругоеProceedings of the 1999 Microelectronic Device Technology III
ГородSanta Clara, CA, USA
Период22.9.9923.9.99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Цитировать

    Kokhanenko, A., Korotaev, A., Voitsekhovskii, A., Grushin, I., Opekunov, M., & Remnev, G. (1999). Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. В Proceedings of SPIE - The International Society for Optical Engineering (Том 3881, стр. 274-283). Society of Photo-Optical Instrumentation Engineers.