Features of the formation of radiation spectra at (111) planar channeling of relativistic electrons in a Si crystal

Результат исследований: Материалы для журналаСтатья

1 Цитирования (Scopus)

Аннотация

The spectral intensity of (111) channeling radiation from electrons is numerically calculated at the energy varying from 100 to 900 MeV and different electron incidence angles relative to the (111) planes in thin Si crystals. The calculation results show that the channeling radiation's spectra have a more complicated structure, and the total channeling radiation's yield is several times larger than that at (100) or (110) channeling.

Язык оригиналаАнглийский
Страницы (с-по)966-970
Число страниц5
ЖурналJournal of Surface Investigation
Том3
Номер выпуска6
DOI
СостояниеОпубликовано - 1 дек 2009

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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