Аннотация

This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.

Язык оригиналаАнглийский
Номер статьи012025
ЖурналJournal of Physics: Conference Series
Том552
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 2014
СобытиеInternational Congress on Energy Fluxes and Radiation Effects 2014, EFRE 2014 - Tomsk, Российская Федерация
Продолжительность: 21 сен 201426 сен 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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