Experiments with nanosecond Plasma Opening Switch at the 1 MA current level

Аннотация

The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.

Язык оригинала	Английский
Название основной публикации	1990 8th International Conference on High-Power Particle Beams, BEAMS 1990
Страницы	1017-1021
Число страниц	5
Состояние	Опубликовано - 1990
Опубликовано для внешнего пользования	Да
Событие	1990 8th International Conference on High-Power Particle Beams, BEAMS 1990 - Novosibirsk, Российская Федерация Продолжительность: 2 июл 1990 → 5 июл 1990

Другое

Другое	1990 8th International Conference on High-Power Particle Beams, BEAMS 1990
Страна	Российская Федерация
Город	Novosibirsk
Период	2.7.90 → 5.7.90

ASJC Scopus subject areas

Nuclear and High Energy Physics

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Bystritskii, V. M., Glushko, Y. A., Mesyats, G. A., Krasik, Y. E., Luchfnskii, A. V., Petin, V. K., Ratakhin, N. A., & Sinebrjukhov, A. A. (1990). Experiments with nanosecond Plasma Opening Switch at the 1 MA current level. В 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990 (стр. 1017-1021). [6396394]

Experiments with nanosecond Plasma Opening Switch at the 1 MA current level. / Bystritskii, V. M.; Glushko, Yu A.; Mesyats, G. A.; Krasik, Ya E.; Luchfnskii, A. V.; Petin, V. K.; Ratakhin, N. A.; Sinebrjukhov, A. A.

1990 8th International Conference on High-Power Particle Beams, BEAMS 1990. 1990. стр. 1017-1021 6396394.

Результат исследований: Материалы для книги/типы отчетов › Материалы для конференции

Bystritskii, VM, Glushko, YA, Mesyats, GA, Krasik, YE, Luchfnskii, AV, Petin, VK, Ratakhin, NA & Sinebrjukhov, AA 1990, Experiments with nanosecond Plasma Opening Switch at the 1 MA current level. в 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990., 6396394, стр. 1017-1021, 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990, Novosibirsk, Российская Федерация, 2.7.90.

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abstract = "The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.",

author = "Bystritskii, {V. M.} and Glushko, {Yu A.} and Mesyats, {G. A.} and Krasik, {Ya E.} and Luchfnskii, {A. V.} and Petin, {V. K.} and Ratakhin, {N. A.} and Sinebrjukhov, {A. A.}",

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AU - Krasik, Ya E.

AU - Luchfnskii, A. V.

AU - Petin, V. K.

AU - Ratakhin, N. A.

AU - Sinebrjukhov, A. A.

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AB - The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.

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