Evolution of structure-phase states of hypoeutectic silumin irradiated by intensive pulse electron beams

The methods of modern material physics has been applied to analyse the structural and phase states and the defect substructure of hypoeutectic silumin treated by electron beams with the parameters as follows: energy density - 10-35 J cm^-2, pulse duration - 10 μs, number of pulses - 3, pulse-repetition frequency - 0.3. Irradiation of the surface causes melting of the surface layer, formation of a submicron-scale structure of high-speed cellular crystallization and the reprecipitation of particles of the second phase. On distancing from the irradiated surface there were discovered the areas with cells and eutectic lamellae Al-Si separated by layers containing the particles of Cu₁₅Si₄, Al₄Cu₃ the, silicon and copper. There has been made a suggestion about the nature of lamination of the material element composition.