Evolution of film temperature during magnetron sputtering

L. R. Shaginyan, J. G. Han, V. R. Shaginyan, J. Musil

Результат исследований: Материалы для журналаСтатья

20 Цитирования (Scopus)

Выдержка

We report on the results of measurements of the temperature TFsurf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The TFsurf and substrate temperature (Ts) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the TFsurf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the Ts after stopping the deposition. At the same time, the Ts either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the Ts remains several times lower than the TFsurf. The TFsurf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of°C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature TFsurf of HTSL is several times higher than the Ts. Variations in the TFsurf fairly correlate with structure changes of Cr films along thickness investigated in detail previously.

Язык оригиналаАнглийский
Номер статьи140604JVA
Страницы (с-по)1083-1090
Число страниц8
ЖурналJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Том24
Номер выпуска4
DOI
СостояниеОпубликовано - 1 июл 2006

Отпечаток

Magnetron sputtering
magnetron sputtering
Substrates
surface layers
Cooling
cooling
Temperature
temperature
Chromium
Silicon
Film growth
thermocouples
Thermocouples
stopping
Film thickness
Copper
chromium
Thermal conductivity
film thickness
thermal conductivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Цитировать

Evolution of film temperature during magnetron sputtering. / Shaginyan, L. R.; Han, J. G.; Shaginyan, V. R.; Musil, J.

В: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Том 24, № 4, 140604JVA, 01.07.2006, стр. 1083-1090.

Результат исследований: Материалы для журналаСтатья

Shaginyan, L. R. ; Han, J. G. ; Shaginyan, V. R. ; Musil, J. / Evolution of film temperature during magnetron sputtering. В: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2006 ; Том 24, № 4. стр. 1083-1090.
@article{9e8f831c5da74983a58eaafba356127c,
title = "Evolution of film temperature during magnetron sputtering",
abstract = "We report on the results of measurements of the temperature TFsurf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The TFsurf and substrate temperature (Ts) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the TFsurf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the Ts after stopping the deposition. At the same time, the Ts either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the Ts remains several times lower than the TFsurf. The TFsurf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of°C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature TFsurf of HTSL is several times higher than the Ts. Variations in the TFsurf fairly correlate with structure changes of Cr films along thickness investigated in detail previously.",
author = "Shaginyan, {L. R.} and Han, {J. G.} and Shaginyan, {V. R.} and J. Musil",
year = "2006",
month = "7",
day = "1",
doi = "10.1116/1.2210947",
language = "English",
volume = "24",
pages = "1083--1090",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Evolution of film temperature during magnetron sputtering

AU - Shaginyan, L. R.

AU - Han, J. G.

AU - Shaginyan, V. R.

AU - Musil, J.

PY - 2006/7/1

Y1 - 2006/7/1

N2 - We report on the results of measurements of the temperature TFsurf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The TFsurf and substrate temperature (Ts) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the TFsurf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the Ts after stopping the deposition. At the same time, the Ts either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the Ts remains several times lower than the TFsurf. The TFsurf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of°C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature TFsurf of HTSL is several times higher than the Ts. Variations in the TFsurf fairly correlate with structure changes of Cr films along thickness investigated in detail previously.

AB - We report on the results of measurements of the temperature TFsurf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The TFsurf and substrate temperature (Ts) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the TFsurf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the Ts after stopping the deposition. At the same time, the Ts either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the Ts remains several times lower than the TFsurf. The TFsurf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of°C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature TFsurf of HTSL is several times higher than the Ts. Variations in the TFsurf fairly correlate with structure changes of Cr films along thickness investigated in detail previously.

UR - http://www.scopus.com/inward/record.url?scp=33745492244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745492244&partnerID=8YFLogxK

U2 - 10.1116/1.2210947

DO - 10.1116/1.2210947

M3 - Article

AN - SCOPUS:33745492244

VL - 24

SP - 1083

EP - 1090

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4

M1 - 140604JVA

ER -