Estimation of SiC JFET temperature during short-circuit operations

Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean Claude Faugières, Peter Friedrichs, Ali Haddouche

Результат исследований: Материалы для журналаСтатья

7 Цитирования (Scopus)

Аннотация

This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Язык оригиналаАнглийский
Страницы (с-по)1358-1362
Число страниц5
ЖурналMicroelectronics Reliability
Том49
Номер выпуска9-11
DOI
СостояниеОпубликовано - 1 сен 2009
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Цитировать

    Berkani, M., Lefebvre, S., Boughrara, N., Khatir, Z., Faugières, J. C., Friedrichs, P., & Haddouche, A. (2009). Estimation of SiC JFET temperature during short-circuit operations. Microelectronics Reliability, 49(9-11), 1358-1362. https://doi.org/10.1016/j.microrel.2009.06.024