Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

F. Boige, F. Richardeau, S. Lefebvre, J. M. Blaquière, G. Guibaud, A. Bourennane

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Аннотация

The purpose of this paper is to present a complete experimentation of the two failure modes in competition that can appear during short-circuit (SC) fault operation of single-chip 1,2 kV SiC MOSFETs from different manufacturers including planar and trench-gate structures, well-known or recent devices. Ruggedness and selective failure modes are identified in relation with the power density dissipated by the chip and the simulated 1D-thermal junction. Finally, the chips of the devices which failed in a “fail-to-open” mode have been studied in order to find the physical reasons of this original and unusual fail-safe mode.

Язык оригиналаАнглийский
Страницы (с-по)598-603
Число страниц6
ЖурналMicroelectronics Reliability
Том88-90
DOI
СостояниеОпубликовано - 1 сен 2018
Опубликовано для внешнего пользованияДа

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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