Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

F. Boige, F. Richardeau, S. Lefebvre, J. M. Blaquière, G. Guibaud, A. Bourennane

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Выдержка

The purpose of this paper is to present a complete experimentation of the two failure modes in competition that can appear during short-circuit (SC) fault operation of single-chip 1,2 kV SiC MOSFETs from different manufacturers including planar and trench-gate structures, well-known or recent devices. Ruggedness and selective failure modes are identified in relation with the power density dissipated by the chip and the simulated 1D-thermal junction. Finally, the chips of the devices which failed in a “fail-to-open” mode have been studied in order to find the physical reasons of this original and unusual fail-safe mode.

Язык оригиналаАнглийский
Страницы (с-по)598-603
Число страниц6
ЖурналMicroelectronics Reliability
Том88-90
DOI
СостояниеОпубликовано - 1 сен 2018
Опубликовано для внешнего пользованияДа

Отпечаток

short circuits
MOSFET devices
Short circuit currents
Failure modes
field effect transistors
failure modes
chips
ruggedness
experimentation
radiant flux density
Power MOSFET
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Цитировать

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. / Boige, F.; Richardeau, F.; Lefebvre, S.; Blaquière, J. M.; Guibaud, G.; Bourennane, A.

В: Microelectronics Reliability, Том 88-90, 01.09.2018, стр. 598-603.

Результат исследований: Материалы для журналаСтатья

Boige, F. ; Richardeau, F. ; Lefebvre, S. ; Blaquière, J. M. ; Guibaud, G. ; Bourennane, A. / Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. В: Microelectronics Reliability. 2018 ; Том 88-90. стр. 598-603.
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AU - Richardeau, F.

AU - Lefebvre, S.

AU - Blaquière, J. M.

AU - Guibaud, G.

AU - Bourennane, A.

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