In this report, results of a measurement of characteristic X-ray (CXR) yields from oriented tungsten crystal targets irradiated by 600-1000 MeV electrons are presented. Characteristic X-rays from tungsten are measured with a Si(Li) semiconductor detector placed at the backward direction with respect to the incident electron beam. We have observed an enhancement of the X-ray yield due to the K-shell ionization when the crystal axis 〈1 1 1〉 is oriented along the beam. The ratio of the K-line yield from the oriented crystal to the one from the disoriented crystal is about 1.6-1.9 for the target thickness of 1.2 mm at the electron energy of 1000 MeV. For L-line yields the enhancement is not appreciable. We demonstrated a possibility of using the orientation dependence of the CXR as a mean of aligning the crystal axis at the channeling condition to the beam.
|Журнал||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Состояние||Опубликовано - янв 2001|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces