Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene

Pavel Trayon, Juriy Sakharov, Serge Gyngazov

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Выдержка

The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.

Язык оригиналаАнглийский
Название основной публикацииTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
ИздательIEEE Computer Society
Страницы186-187
Число страниц2
Том2005
ISBN (печатное издание)0780383974, 9780780383975
DOI
СостояниеОпубликовано - 2005
СобытиеTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, Великобритания
Продолжительность: 10 июл 200514 июл 2005

Другое

ДругоеTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
СтранаВеликобритания
ГородOxford
Период10.7.0514.7.05

Отпечаток

Polypropylenes
Electrons
Metals
Flat panel displays
Microelectronics
Semiconductor materials
Thin films

ASJC Scopus subject areas

  • Engineering(all)

Цитировать

Trayon, P., Sakharov, J., & Gyngazov, S. (2005). Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. В Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 (Том 2005, стр. 186-187). [1619548] IEEE Computer Society. https://doi.org/10.1109/IVNC.2005.1619548

Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. / Trayon, Pavel; Sakharov, Juriy; Gyngazov, Serge.

Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Том 2005 IEEE Computer Society, 2005. стр. 186-187 1619548.

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Trayon, P, Sakharov, J & Gyngazov, S 2005, Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. в Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. том. 2005, 1619548, IEEE Computer Society, стр. 186-187, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, Oxford, Великобритания, 10.7.05. https://doi.org/10.1109/IVNC.2005.1619548
Trayon P, Sakharov J, Gyngazov S. Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. В Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Том 2005. IEEE Computer Society. 2005. стр. 186-187. 1619548 https://doi.org/10.1109/IVNC.2005.1619548
Trayon, Pavel ; Sakharov, Juriy ; Gyngazov, Serge. / Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Том 2005 IEEE Computer Society, 2005. стр. 186-187
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