Electronic and spin structure of a family of Sn-based ternary topological insulators

M. G. Vergniory, T. V. Menshchikova, I. V. Silkin, Yu M. Koroteev, S. V. Eremeev, E. V. Chulkov

Результат исследования: Материалы для журналаСтатья

8 Цитирования (Scopus)

Аннотация

We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.

Язык оригиналаАнглийский
Артикульный номер045134
ЖурналPhysical Review B - Condensed Matter and Materials Physics
Том92
Номер выпуска4
DOI
Статус публикацииОпубликовано - 31 июл 2015
Опубликовано для внешнего пользованияДа

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Цитировать

Vergniory, M. G., Menshchikova, T. V., Silkin, I. V., Koroteev, Y. M., Eremeev, S. V., & Chulkov, E. V. (2015). Electronic and spin structure of a family of Sn-based ternary topological insulators. Physical Review B - Condensed Matter and Materials Physics, 92(4), [045134]. https://doi.org/10.1103/PhysRevB.92.045134