Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices

S. N. Grinyaev, L. N. Nikitina, V. G. Tyuterev

Результат исследований: Материалы для журналаСтатья

2 Цитирования (Scopus)

Выдержка

The deformation potentials of electron scattering at short-wavelength phonons for intervalley transitions in the conduction band of short-period (GaAs)m(AlAs)n (001) (m, n = 1, 2, 3) superlattices are determined by the electron density functional method. The dependences of the electron and phonon states and deformation potentials on the layer thickness in the superlattices are analyzed. The results of ab initio calculations are in good agreement with the data of empirical calculation of the deformation potentials integrated over phonons, but differ from data on the corresponding potentials for partial scattering channels because of approximations of the phenomenological model of interatomic binding.

Язык оригиналаАнглийский
Страницы (с-по)320-331
Число страниц12
ЖурналSemiconductors
Том48
Номер выпуска3
DOI
СостояниеОпубликовано - мар 2014

Отпечаток

Electron-phonon interactions
Superlattices
electron phonon interactions
superlattices
Phonons
phonons
Electron scattering
Electron transitions
Conduction bands
Carrier concentration
electron states
Scattering
Wavelength
conduction bands
electron scattering
Electrons
gallium arsenide
approximation
scattering
wavelengths

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Цитировать

Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices. / Grinyaev, S. N.; Nikitina, L. N.; Tyuterev, V. G.

В: Semiconductors, Том 48, № 3, 03.2014, стр. 320-331.

Результат исследований: Материалы для журналаСтатья

Grinyaev, S. N. ; Nikitina, L. N. ; Tyuterev, V. G. / Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices. В: Semiconductors. 2014 ; Том 48, № 3. стр. 320-331.
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