Выдержка
The deformation potentials of electron scattering at short-wavelength phonons for intervalley transitions in the conduction band of short-period (GaAs)m(AlAs)n (001) (m, n = 1, 2, 3) superlattices are determined by the electron density functional method. The dependences of the electron and phonon states and deformation potentials on the layer thickness in the superlattices are analyzed. The results of ab initio calculations are in good agreement with the data of empirical calculation of the deformation potentials integrated over phonons, but differ from data on the corresponding potentials for partial scattering channels because of approximations of the phenomenological model of interatomic binding.
| Язык оригинала | Английский |
|---|---|
| Страницы (с-по) | 320-331 |
| Число страниц | 12 |
| Журнал | Semiconductors |
| Том | 48 |
| Номер выпуска | 3 |
| DOI | |
| Состояние | Опубликовано - мар 2014 |
Отпечаток
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
Цитировать
Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices. / Grinyaev, S. N.; Nikitina, L. N.; Tyuterev, V. G.
В: Semiconductors, Том 48, № 3, 03.2014, стр. 320-331.Результат исследований: Материалы для журнала › Статья
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TY - JOUR
T1 - Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices
AU - Grinyaev, S. N.
AU - Nikitina, L. N.
AU - Tyuterev, V. G.
PY - 2014/3
Y1 - 2014/3
N2 - The deformation potentials of electron scattering at short-wavelength phonons for intervalley transitions in the conduction band of short-period (GaAs)m(AlAs)n (001) (m, n = 1, 2, 3) superlattices are determined by the electron density functional method. The dependences of the electron and phonon states and deformation potentials on the layer thickness in the superlattices are analyzed. The results of ab initio calculations are in good agreement with the data of empirical calculation of the deformation potentials integrated over phonons, but differ from data on the corresponding potentials for partial scattering channels because of approximations of the phenomenological model of interatomic binding.
AB - The deformation potentials of electron scattering at short-wavelength phonons for intervalley transitions in the conduction band of short-period (GaAs)m(AlAs)n (001) (m, n = 1, 2, 3) superlattices are determined by the electron density functional method. The dependences of the electron and phonon states and deformation potentials on the layer thickness in the superlattices are analyzed. The results of ab initio calculations are in good agreement with the data of empirical calculation of the deformation potentials integrated over phonons, but differ from data on the corresponding potentials for partial scattering channels because of approximations of the phenomenological model of interatomic binding.
UR - http://www.scopus.com/inward/record.url?scp=84897746922&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84897746922&partnerID=8YFLogxK
U2 - 10.1134/S1063782614030129
DO - 10.1134/S1063782614030129
M3 - Article
AN - SCOPUS:84897746922
VL - 48
SP - 320
EP - 331
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 3
ER -