Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

A. V. Kabyshev, F. V. Konusov, G. E. Remnev

Результат исследования: Материалы для журналаСтатья

Аннотация

Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

Язык оригиналаАнглийский
Страницы (с... по...)607-611
Количество страниц5
ЖурналRussian Physics Journal
Том56
Номер выпуска6
DOI
Статус публикацииОпубликовано - ноя 2013

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать