Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon

O. V. Bogdanov, K. B. Korotchenko, Yu L. Pivovarov

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

It is shown that the inclusion of the band structure of energy levels of channeled positrons (as in the case of electrons) leads to a qualitative change in the angular distribution of X-ray radiation.

Язык оригинала	Английский
Страницы (с-по)	290-296
Число страниц	7
Журнал	Journal of Surface Investigation
Том	2
Номер выпуска	2
DOI	https://doi.org/10.1134/S1027451008020249
Состояние	Опубликовано - апр 2008

ASJC Scopus subject areas

Surfaces, Coatings and Films

Доступ к документу

10.1134/S1027451008020249

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Цитировать

Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon. / Bogdanov, O. V.; Korotchenko, K. B.; Pivovarov, Yu L.

В: Journal of Surface Investigation, Том 2, № 2, 04.2008, стр. 290-296.

Результат исследований: Материалы для журнала › Статья › рецензирование

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