Effect of short circuit aging on safe operating area of SiC MOSFET

Tien Anh Nguyen, Stéphane Lefebvre, Stéphane Azzopardi

Результат исследований: Материалы для журналаСтатья

4 Цитирования (Scopus)

Аннотация

In this paper, we study the effect of aging of SIC MOSFETs on Short Circuit Safe Operating Area and Reverse Bias Safe Operating Area of SiC MOSFETs. SCSOA and RBSOA are determined using short circuit and unclamped inductive switching tests, respectively. Aging of SiC MOSFETs are performed with repetitive short circuit tests at low dissipated energies, which allows to validate the relevance of evolution of different aging indicators measured during the aging process. The decrease in the dissipated energy leading to failure in short circuit and unclamped inductive switching tests allows to clearly link the evolution of these Safe Operating Areas to the degradation of electrical performances (drain and gate leakage currents and on-state resistance). Obtained results show that a strong increase in the drain and/or gate leakage currents after aging has a great effect on the decrease of Safe Operating Area especially on RBSOA and that on-state resistance increase due to aging process represents less impacts in the evolution of RBSOA than in the case of SCSOA. It is also clear from the obtained results that without any apparent evolution of these leakage currents, the decrease of SCSOA after aging is related to the increase in the on-state resistance.

Язык оригиналаАнглийский
Страницы (с-по)645-651
Число страниц7
ЖурналMicroelectronics Reliability
Том88-90
DOI
СостояниеОпубликовано - 1 сен 2018
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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