The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H+ and C8+ ions with an energy of up to 1 MeV. Concentrations of 1010-1012 cm3 and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.
|Журнал||Physics and chemistry of materials treatment|
|Состояние||Опубликовано - мая 1991|
ASJC Scopus subject areas