Effect of defects in the structure of the metal on the form of distribution of implanted ions

V. I. Boiko, B. E. Kodlubovich, I. V. Shamanin

Результат исследований: Материалы для журналаСтатьярецензирование

1 Цитирования (Scopus)

Аннотация

The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H+ and C8+ ions with an energy of up to 1 MeV. Concentrations of 1010-1012 cm3 and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.

Язык оригиналаАнглийский
Страницы (с-по)241-243
Число страниц3
ЖурналPhysics and chemistry of materials treatment
Том25
Номер выпуска3
СостояниеОпубликовано - мая 1991

ASJC Scopus subject areas

  • Engineering(all)

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