Effect in GaAs produced by fast neutrons and protons

E. G. Soboleva, V. V. Litvinenko, T. B. Krit

Результат исследования: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.

Язык оригиналаАнглийский
Заголовок главной публикации2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
ИздательInstitute of Electrical and Electronics Engineers Inc.
ISBN (электронная версия)9781479971022
DOI
Статус публикацииОпубликовано - 1 июл 2015
Событие2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Российская Федерация
Длительность: 21 мая 201523 мая 2015

Конференция

Конференция2015 International Siberian Conference on Control and Communications, SIBCON 2015
СтранаРоссийская Федерация
ГородOmsk
Период21.5.1523.5.15

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ASJC Scopus subject areas

  • Computer Networks and Communications
  • Control and Systems Engineering

Цитировать

Soboleva, E. G., Litvinenko, V. V., & Krit, T. B. (2015). Effect in GaAs produced by fast neutrons and protons. В 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147220] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147220