ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE.

Результат исследования: Материалы для книги/типы отчетовГлава

Аннотация

A transistorized measurement circuit has been developed which can be used in radiation defectoscopes and thickness meters which operate in an average-current mode. The circuit allows the resistance of the anode load of the photoelectron mutliplier to be increased to 10-50 G OMEGA . The input stage is implemented using a KP103 field-effect transistor. The drift of the circuit does not exceed 50 mV when the temperaturte varies in the 0 to plus 50 degree C range. A pointer meter or an automatic pen recorder may be used as the indicator. The current drawn does not exceed 1. 5 mA. The long-term drift at a temperature 20 plus or minus 5 degree C does not exceed plus or minus 5 mV per day.

Язык оригиналаАнглийский
Заголовок главной публикацииInstrum Exp Tech
Страницы1408-1410
Количество страниц3
Том16
Редакция5 Part 1
Статус публикацииОпубликовано - сен 1973

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ASJC Scopus subject areas

  • Engineering(all)

Цитировать

Kapranov, B. I. (1973). ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE. В Instrum Exp Tech (5 Part 1 ред., Том 16, стр. 1408-1410)