Measurements were made of the thermal effect during gamma -photon irradiation of semiconductor crystals containing defects. The rise in the temperature of a crystal due to the energy released as a result of defect annihilation was 2. 6 K. This small thermal effect was attributed to the absorption of the annihilation energy by defect clusters.
|Журнал||Soviet physics. Semiconductors|
|Состояние||Опубликовано - ноя 1984|
ASJC Scopus subject areas