Dynamic regime of electron transport in correlated one-dimensional conductor with defect

S. N. Artemenko, P. P. Aseev, D. S. Shapiro, R. R. Vakhitov

Результат исследований: Материалы для журналаСтатья


The electron transport in a 1D conductor with an isolated local defect such as an impurity or a non-adiabatic contact is studied theoretically. A new regime of conduction in correlated 1D systems is predicted beyond the well-known regime of tunneling resulting in the power-law I-V-curves. In this regime a quantum wire becomes "opened" at a voltage bias above the threshold value determined by 2kF-component of impurity potential renormalized by fluctuations, giving rise to a rapid increase of the dc current, Ī, accompanied by ac oscillations of frequency f=Ī/e. Manifestations of the effect resemble the Coulomb blockade and the Josephson effect. The spin bias applied to the system affects the I-V curves due to violation of the spin-charge separation at the defect site. The 1D conductor is described in terms of the Tomonaga-Luttinger Hamiltonian with short range or long-range Coulomb interaction by means of the bosonization technique. We derive boundary conditions that take into account relaxation in the leads and permit to solve non-equilibrium problems. Charge fluctuations are studied by means of Gaussian model which can be justified strictly in the limit of large voltages or strong inter-electronic repulsion. Spin fluctuations are taken into account strictly by means of the refermionization technique applicable in the case of spin-rotation invariant interaction.

Язык оригиналаАнглийский
Страницы (с-по)73-83
Число страниц11
ЖурналPhysica E: Low-Dimensional Systems and Nanostructures
СостояниеОпубликовано - 1 апр 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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