Distributed and coupled electrothermal model of power semiconductor devices

G. Belkacem, D. Labrousse, S. Lefebvre, P. Y. Joubert, U. Kuhne, L. Fribourg, R. Soulat, E. Florentin, C. Rey

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

Язык оригиналаАнглийский
Название основной публикации2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
Страницы84-89
Число страниц6
DOI
СостояниеОпубликовано - 24 мая 2012
Опубликовано для внешнего пользованияДа
Событие2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 - Nabeul, Тунис
Продолжительность: 26 мар 201228 мар 2012

Серия публикаций

Название2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

Конференция

Конференция2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
СтранаТунис
ГородNabeul
Период26.3.1228.3.12

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Automotive Engineering

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    Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., Soulat, R., Florentin, E., & Rey, C. (2012). Distributed and coupled electrothermal model of power semiconductor devices. В 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 (стр. 84-89). [6195253] (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012). https://doi.org/10.1109/REVET.2012.6195253