Distinguishing between individual contributions to the via resistance in carbon nanotubes based interconnects

Holger Fiedler, Marius Toader, Sascha Hermann, Raul D. Rodriguez, Evgeniya Sheremet, Michael Rennau, Steffen Schulze, Thomas Waechtler, Michael Hietschold, Dietrich R.T. Zahn, Stefan E. Schulz, Thomas Gessnera

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Выдержка

We report on the design and fabrication of carbon nanotube (CNT) vias based on a hybrid metal/CNT technology. The CNTs were integrated on a 4 inch Si wafer platform using conventional semiconductor processes. Multiwalled carbon nanotubes were grown vertically aligned on a copper based metal line. Via holes were prepared using a single damascene process. By employing a substratebased selective deactivation of the catalyst, CNT growth was restricted to the vias. Following this process scheme, the impact of post-CNT growth procedures, like chemical mechanical planarization and sample annealing, were investigated and electrically evaluated using conductive atomic force microscopy and current-voltage (I-V) characterization. Probing 440 individual structures, the resistance of two series-connected 5 ìm vias were determined to be (800 ± 60) Ω after chemical mechanical planarization. By obtaining the I-V characteristics of single CNTs within an individual via, we found that the measured resistance is determined by the contact resistance of the CNT-metal interface. Two mechanisms were found to be relevant here. First partial oxidation of the metal interface during processing, and secondly, stress-induced voiding caused by the high temperatures during the CNT growth process. Changes in the integration scheme to reduce the overall CNT via resistance are proposed.

Язык оригиналаАнглийский
ЖурналECS Journal of Solid State Science and Technology
Том1
Номер выпуска6
DOI
СостояниеОпубликовано - 1 дек 2012

Отпечаток

Carbon Nanotubes
Carbon nanotubes
Metals
Chemical mechanical polishing
Multiwalled carbon nanotubes (MWCN)
Contact resistance
Copper
Atomic force microscopy
Annealing
Semiconductor materials
Fabrication
Oxidation
Catalysts
Electric potential
Processing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Цитировать

Distinguishing between individual contributions to the via resistance in carbon nanotubes based interconnects. / Fiedler, Holger; Toader, Marius; Hermann, Sascha; Rodriguez, Raul D.; Sheremet, Evgeniya; Rennau, Michael; Schulze, Steffen; Waechtler, Thomas; Hietschold, Michael; Zahn, Dietrich R.T.; Schulz, Stefan E.; Gessnera, Thomas.

В: ECS Journal of Solid State Science and Technology, Том 1, № 6, 01.12.2012.

Результат исследований: Материалы для журналаСтатья

Fiedler, H, Toader, M, Hermann, S, Rodriguez, RD, Sheremet, E, Rennau, M, Schulze, S, Waechtler, T, Hietschold, M, Zahn, DRT, Schulz, SE & Gessnera, T 2012, 'Distinguishing between individual contributions to the via resistance in carbon nanotubes based interconnects', ECS Journal of Solid State Science and Technology, том. 1, № 6. https://doi.org/10.1149/2.027206jss
Fiedler, Holger ; Toader, Marius ; Hermann, Sascha ; Rodriguez, Raul D. ; Sheremet, Evgeniya ; Rennau, Michael ; Schulze, Steffen ; Waechtler, Thomas ; Hietschold, Michael ; Zahn, Dietrich R.T. ; Schulz, Stefan E. ; Gessnera, Thomas. / Distinguishing between individual contributions to the via resistance in carbon nanotubes based interconnects. В: ECS Journal of Solid State Science and Technology. 2012 ; Том 1, № 6.
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AU - Sheremet, Evgeniya

AU - Rennau, Michael

AU - Schulze, Steffen

AU - Waechtler, Thomas

AU - Hietschold, Michael

AU - Zahn, Dietrich R.T.

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AU - Gessnera, Thomas

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