Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors

Matthieu Landel, Stéphane Lefebvre, Denis Labrousse, Cyrille Gautier, Fadi Zaki, Zoubir Khatir

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

6 Цитирования (Scopus)

Аннотация

This paper presents an experimental study of the robustness of 600 V normally-off GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operations. The obtained results reveal a severe dispersal in terms of SC robustness: some devices were able to support SC of a very long duration but others failed immediately, for the same electrical and thermal initial constraints. In order to understand this dispersal, static characterizations and collapserelated measurements have been carried out on a large number of devices from the same manufacturer with the same blocking voltage and different current ratings. Then, destructive shortcircuits were launched on these transistors. Finally, the time leading to failure (TLF) for a given DC voltage was correlated with the parameters extracted from the characterizations.

Язык оригиналаАнглийский
Название основной публикацииPCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
ИздательInstitute of Electrical and Electronics Engineers Inc.
ISBN (электронное издание)9783800744244
DOI
СостояниеОпубликовано - 1 янв 2017
Опубликовано для внешнего пользованияДа
Событие2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 - Nuremberg, Германия
Продолжительность: 16 мая 201718 мая 2017

Серия публикаций

НазваниеPCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Конференция

Конференция2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017
СтранаГермания
ГородNuremberg
Период16.5.1718.5.17

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Control and Optimization
  • Artificial Intelligence

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  • Цитировать

    Landel, M., Lefebvre, S., Labrousse, D., Gautier, C., Zaki, F., & Khatir, Z. (2017). Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. В PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [7990737] (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SBMicro.2017.7990737