Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature

A. L. Aseev, Yu N. Golobokov, S. I. Stenin

Результат исследований: Материалы для журналаСтатья

12 Цитирования (Scopus)

Выдержка

Dislocation processes occurring during plastic deformation of Si and Ge for θ = 0.50 to 0.95 (θ = T/Tm is the relative temperature) have been studied both by etch pit method and TEM. A similarity of dislocation processes in Si and Ge when compared in terms of θ has been found. In low‐temperature deformation (θ = 0.5 to 0.8) dislocation glide is realized and cross slip is activated. The cross slip gives rise to a multiplication of dislocations. The interaction and multiplication of dislocations are accompanied by the formation of dipoles including faulted ones, multipoles, and bundles in slip bands. A system of Lomer dislocations is the main source of long‐range internal stresses in low‐temperature deformation. In high‐temperature deformation (θ > 0.8) gliding of dislocations combined with climb is realized. This results in decreasing the number of dipoles and Lomer dislocations. At θ > 0.8 a main mechanism of dislocation interaction is their intersection with the degeneration of a quadrupole node into two triple ones.

Язык оригиналаАнглийский
Страницы (с-по)355-364
Число страниц10
Журналphysica status solidi (a)
Том28
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 1975
Опубликовано для внешнего пользованияДа

Отпечаток

plastic deformation
Melting point
Plastic deformation
melting
temperature
Residual stresses
Transmission electron microscopy
multiplication
slip
dipoles
gliding
degeneration
edge dislocations
Temperature
intersections
multipoles
bundles
residual stress
quadrupoles
interactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Цитировать

Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature. / Aseev, A. L.; Golobokov, Yu N.; Stenin, S. I.

В: physica status solidi (a), Том 28, № 1, 01.01.1975, стр. 355-364.

Результат исследований: Материалы для журналаСтатья

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