Dielectric properties of boron nitride after high-temperature implantation with ions

Alexander V. Kabyshev, Fedor V. Konusov, Vladimir V. Lopatin, Nataliya V. Krivosheeva

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Выдержка

Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.

Язык оригиналаАнглийский
Название основной публикации8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
Страницы113-117
Число страниц5
Том3
СостояниеОпубликовано - 2005
Событие8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Российская Федерация
Продолжительность: 26 июн 20043 июл 2004

Другое

Другое8th Korea-Russia International Symposium on Science and Technology, KORUS 2004
СтранаРоссийская Федерация
ГородTomsk
Период26.6.043.7.04

Отпечаток

Boron nitride
Ion implantation
Dielectric properties
Annealing
Ions
Irradiation
Temperature
Defects
Oxygen
Fermi level
Conduction bands
Surface properties

ASJC Scopus subject areas

  • Engineering(all)

Цитировать

Kabyshev, A. V., Konusov, F. V., Lopatin, V. V., & Krivosheeva, N. V. (2005). Dielectric properties of boron nitride after high-temperature implantation with ions. В 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004 (Том 3, стр. 113-117)

Dielectric properties of boron nitride after high-temperature implantation with ions. / Kabyshev, Alexander V.; Konusov, Fedor V.; Lopatin, Vladimir V.; Krivosheeva, Nataliya V.

8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Том 3 2005. стр. 113-117.

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Kabyshev, AV, Konusov, FV, Lopatin, VV & Krivosheeva, NV 2005, Dielectric properties of boron nitride after high-temperature implantation with ions. в 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. том. 3, стр. 113-117, Tomsk, Российская Федерация, 26.6.04.
Kabyshev AV, Konusov FV, Lopatin VV, Krivosheeva NV. Dielectric properties of boron nitride after high-temperature implantation with ions. В 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Том 3. 2005. стр. 113-117
Kabyshev, Alexander V. ; Konusov, Fedor V. ; Lopatin, Vladimir V. ; Krivosheeva, Nataliya V. / Dielectric properties of boron nitride after high-temperature implantation with ions. 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Том 3 2005. стр. 113-117
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