The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures (X=625 nm).
|Журнал||IOP Conference Series: Materials Science and Engineering|
|Состояние||Опубликовано - 23 фев 2016|
ASJC Scopus subject areas
- Materials Science(all)