Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

D. B. Zolotukhin, E. M. Oks, A. V. Tyunkov, Yu G. Yushkov

Результат исследований: Материалы для журналаСтатья

2 Цитирования (Scopus)

Выдержка

We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

Язык оригиналаАнглийский
Номер статьи063302
ЖурналReview of Scientific Instruments
Том87
Номер выпуска6
DOI
СостояниеОпубликовано - 1 июн 2016

Отпечаток

Electron sources
Dielectric films
electron sources
Vacuum
electron beams
Plasmas
Silicon
vacuum
plasma pressure
Electron beams
silicon
metals
oxide films
cathodes
Substrates
atmospheres
Oxide films
Cathodes
oxygen
gases

ASJC Scopus subject areas

  • Instrumentation

Цитировать

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source. / Zolotukhin, D. B.; Oks, E. M.; Tyunkov, A. V.; Yushkov, Yu G.

В: Review of Scientific Instruments, Том 87, № 6, 063302, 01.06.2016.

Результат исследований: Материалы для журналаСтатья

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