Characterisation of silicon carbide Schottky diodes and COOLMOS™ transistors at high temperature

Laurent Dupont, Stéphane Lefebvre, Serge Bontemps, Zoubir Khatir, Régis Meuret

Результат исследования: Материалы для журнала

8 Цитирования (Scopus)

Аннотация

The highly doping level of the base region of COOLMOS™ transistors allows higher temperature operations than with conventional silicon transistors having the same blocking voltage. In this paper, the temperature influence on different SiC Schottky diodes and Silicon COOLMOS™ transistors characteristics is discussed. Comparisons are made between SiC Schottky diodes and Si PIN diodes and beween IGBTs, low voltage MOSFET and COOLMOS™ at high temperature. Results on the leakage current indicate the ability of SiC Schottky diodes and Si COOLMOS™ transistors to be used at temperature about 200°C. The paper will present results on the behaviour of SiC schottky diodes and COOLMOS™ transistors in the on-state and in switching operations. Switching behaviour is analysed in a buck-chopper working in single shoot condition. Results show that temperature has a great influence on the on-state performances of the tested devices, but that the switching performances of SiC Schottky diodes and COOLMOS™ transistors are not significantly modified at elevated temperatures.

Язык оригиналаАнглийский
Страницы (с... по...)566-571
Количество страниц6
ЖурналPESC Record - IEEE Annual Power Electronics Specialists Conference
Том1
Статус публикацииОпубликовано - 29 ноя 2004
Опубликовано для внешнего пользованияДа
Событие2004 IEEE 35th Annual Power Electronics Specialists Conference, PESC04 - Aachen, Германия
Длительность: 20 июн 200425 июн 2004

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ASJC Scopus subject areas

  • Modelling and Simulation
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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