Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследований: Материалы для журнала › Статья

Аннотация

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Язык оригинала	Английский
Номер статьи	062007
Журнал	Journal of Physics: Conference Series
Том	635
Номер выпуска	6
DOI	https://doi.org/10.1088/1742-6596/635/6/062007
Состояние	Опубликовано - 7 сен 2015

ASJC Scopus subject areas

Physics and Astronomy(all)

Доступ к документу

10.1088/1742-6596/635/6/062007

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Цитировать

Takabayashi, Y., Bagrov, V. G., Bogdanov, O. V., Pivovarov, Y. L., & Tukhfatullin, T. A. (2015). Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation. Journal of Physics: Conference Series, 635(6), [062007]. https://doi.org/10.1088/1742-6596/635/6/062007

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AU - Tukhfatullin, T. A.

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