Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследования: Материалы для журналаСтатья

1 Цитирования (Scopus)

Аннотация

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Язык оригиналаАнглийский
Артикульный номер062007
ЖурналJournal of Physics: Conference Series
Том635
Номер выпуска6
DOI
Статус публикацииОпубликовано - 7 сен 2015

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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