Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследований: Материалы для журнала › Статья

1 цитирование (Scopus)

Выдержка

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Язык оригиналаАнглийский
Номер статьи062007
ЖурналJournal of Physics: Conference Series
Том635
Номер выпуска6
DOI
СостояниеОпубликовано - 7 сен 2015

Отпечаток

radiation spectra
silicon
radiation
crystals
electrons
angular distribution
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation. / Takabayashi, Y.; Bagrov, V. G.; Bogdanov, O. V.; Pivovarov, Yu L.; Tukhfatullin, T. A.

В: Journal of Physics: Conference Series, Том 635, № 6, 062007, 07.09.2015.

Результат исследований: Материалы для журнала › Статья

Takabayashi, Y, Bagrov, VG, Bogdanov, OV, Pivovarov, YL & Tukhfatullin, TA 2015, 'Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation', Journal of Physics: Conference Series, том. 635, № 6, 062007. https://doi.org/10.1088/1742-6596/635/6/062007
Takabayashi Y, Bagrov VG, Bogdanov OV, Pivovarov YL, Tukhfatullin TA. Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation. Journal of Physics: Conference Series. 2015 Сент. 7;635(6). 062007. https://doi.org/10.1088/1742-6596/635/6/062007
Takabayashi, Y. ; Bagrov, V. G. ; Bogdanov, O. V. ; Pivovarov, Yu L. ; Tukhfatullin, T. A. / Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation. В: Journal of Physics: Conference Series. 2015 ; Том 635, № 6.
@article{7b980d0f790743f4b23d915a0fcf46c1,
title = "Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation",
abstract = "The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.",
author = "Y. Takabayashi and Bagrov, {V. G.} and Bogdanov, {O. V.} and Pivovarov, {Yu L.} and Tukhfatullin, {T. A.}",
year = "2015",
month = "9",
day = "7",
doi = "10.1088/1742-6596/635/6/062007",
language = "English",
volume = "635",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "6",

}

TY - JOUR

T1 - Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

AU - Takabayashi, Y.

AU - Bagrov, V. G.

AU - Bogdanov, O. V.

AU - Pivovarov, Yu L.

AU - Tukhfatullin, T. A.

PY - 2015/9/7

Y1 - 2015/9/7

N2 - The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

AB - The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

UR - http://www.scopus.com/inward/record.url?scp=84948783989&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948783989&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/635/6/062007

DO - 10.1088/1742-6596/635/6/062007

M3 - Article

AN - SCOPUS:84948783989

VL - 635

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 6

M1 - 062007

ER -

Доступ к документам