Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследований: Материалы для журналаСтатья

1 цитирование (Scopus)

Выдержка

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Язык оригиналаАнглийский
Номер статьи062007
ЖурналJournal of Physics: Conference Series
Том635
Номер выпуска6
DOI
СостояниеОпубликовано - 7 сен 2015

Отпечаток

radiation spectra
silicon
radiation
crystals
electrons
angular distribution
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation. / Takabayashi, Y.; Bagrov, V. G.; Bogdanov, O. V.; Pivovarov, Yu L.; Tukhfatullin, T. A.

В: Journal of Physics: Conference Series, Том 635, № 6, 062007, 07.09.2015.

Результат исследований: Материалы для журналаСтатья

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