Calculation of the spatial distribution of defects and cascade- Probability functions in the materials

A. A. Kupchishin, A. A. Kupchishin, E. V. Shmygalev, T. A. Shmygaleva, K. B. Tlebaev

Результат исследования: Материалы для журнала

Аннотация

In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.

Язык оригинала	Английский
Артикульный номер	012047
Журнал	Journal of Physics: Conference Series
Том	552
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/552/1/012047
Статус публикации	Опубликовано - 1 янв 2014
Опубликовано для внешнего пользования	Да
Событие	International Congress on Energy Fluxes and Radiation Effects 2014, EFRE 2014 - Tomsk, Российская Федерация Длительность: 21 сен 2014 → 26 сен 2014

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ASJC Scopus subject areas

Physics and Astronomy(all)

Цитировать

Kupchishin, A. A., Kupchishin, A. A., Shmygalev, E. V., Shmygaleva, T. A., & Tlebaev, K. B. (2014). Calculation of the spatial distribution of defects and cascade- Probability functions in the materials. Journal of Physics: Conference Series, 552(1), [012047]. https://doi.org/10.1088/1742-6596/552/1/012047

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AU - Kupchishin, A. A.

AU - Shmygalev, E. V.

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AU - Tlebaev, K. B.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.

AB - In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.

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VL - 552

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

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Доступ к документу

10.1088/1742-6596/552/1/012047