Аннотация
In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.
| Язык оригинала | Английский |
|---|---|
| Номер статьи | 012047 |
| Журнал | Journal of Physics: Conference Series |
| Том | 552 |
| Номер выпуска | 1 |
| DOI | |
| Состояние | Опубликовано - 1 янв 2014 |
| Опубликовано для внешнего пользования | Да |
| Событие | International Congress on Energy Fluxes and Radiation Effects 2014, EFRE 2014 - Tomsk, Российская Федерация Продолжительность: 21 сен 2014 → 26 сен 2014 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Цитировать
Kupchishin, A. A., Kupchishin, A. A., Shmygalev, E. V., Shmygaleva, T. A., & Tlebaev, K. B. (2014). Calculation of the spatial distribution of defects and cascade- Probability functions in the materials. Journal of Physics: Conference Series, 552(1), [012047]. https://doi.org/10.1088/1742-6596/552/1/012047