Calculation of the spatial distribution of defects and cascade- Probability functions in the materials

A. A. Kupchishin, A. A. Kupchishin, E. V. Shmygalev, T. A. Shmygaleva, K. B. Tlebaev

Результат исследования: Материалы для журнала

2 Цитирования (Scopus)

Аннотация

In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.

Язык оригиналаАнглийский
Артикульный номер012047
ЖурналJournal of Physics: Conference Series
Том552
Номер выпуска1
DOI
Статус публикацииОпубликовано - 1 янв 2014
Опубликовано для внешнего пользованияДа
СобытиеInternational Congress on Energy Fluxes and Radiation Effects 2014, EFRE 2014 - Tomsk, Российская Федерация
Длительность: 21 сен 201426 сен 2014

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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