Аннотация
In paper the experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (Eb) and the boundary position (ξ) between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tanδ in low and high field were obtained. We suppose that the discovered changes in Eb and tanδ with the changing ξ are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers.
| Язык оригинала | Английский |
|---|---|
| Название основной публикации | IEE Conference Publication |
| Место публикации | Stevenage, United Kingdom |
| Издатель | IEE |
| Том | 4 |
| Издание | 467 |
| ISBN (печатное издание) | 0852967195 |
| Состояние | Опубликовано - 1999 |
| Событие | Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99) - London, UK Продолжительность: 23 авг 1999 → 27 авг 1999 |
Другое
| Другое | Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99) |
|---|---|
| Город | London, UK |
| Период | 23.8.99 → 27.8.99 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Цитировать
Lebedev, S. M., Gefle, O. S., Pokholkov, Y. P., & Chichikin, V. I. (1999). Breakdown strength of two-layer dielectrics. В IEE Conference Publication (467 ред., Том 4). IEE.