A detailed treatment in the classical and quantum-mechanical approximations of the bound motion of energetic electrons with certain atomic planes of Si is given. For electrons with energies up to 2. 5 MeV only a few resolved quantized states are obtained. The angular distributions of electrons in the ground and excited states are calculated and compared with experimental data. It is shown that electrons are effectively channeled through the crystal along the atomic planes, thereby being mainly in an excited state.
|Журнал||Physica Status Solidi (B) Basic Research|
|Состояние||Опубликовано - 1976|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics