Application of high-frequency short-pulsed plasma-immersion ion implantation or deposition method for dielectric materials processing using gas, metal and gas-metal plasma

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

A new approach in the development of advanced coating deposition and ion implantation method including an application of filtered dc metal plasma and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10%-99% are considered. The ion energy spectrum for different negative bias potential pulse duration (120-1100) ns was measured. The map of different methods of ion beam and plasma material treatment using high-frequency short pulse metal plasma immersion ion implantation or deposition depending on bias pulse duty factor and amplitude for Cu plasma is presented. The ion assisted coating deposition depending on samples conductivity and thickness, plasma concentration, pulse repetition rate and amplitude and duty factor has been examined.

Язык оригиналаАнглийский
Название основной публикацииProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOI
СостояниеОпубликовано - 2012
Событие2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Российская Федерация
Продолжительность: 18 сен 201221 сен 2012

Другое

Другое2012 7th International Forum on Strategic Technology, IFOST 2012
СтранаРоссийская Федерация
ГородTomsk
Период18.9.1221.9.12

ASJC Scopus subject areas

  • Management of Technology and Innovation

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