An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.
|Журнал||Physics of the Solid State|
|Состояние||Опубликовано - дек 1996|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics