Аннотация
An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.
| Язык оригинала | Английский |
|---|---|
| Страницы (с-по) | 1969-1971 |
| Число страниц | 3 |
| Журнал | Physics of the Solid State |
| Том | 38 |
| Номер выпуска | 12 |
| Состояние | Опубликовано - дек 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Цитировать
Khon, Y. A., & Panin, V. E. (1996). Anomalous mass transport in deformable materials under "pressure + shear" conditions. Physics of the Solid State, 38(12), 1969-1971.