Anomalous mass transport in deformable materials under "pressure + shear" conditions

Yu A. Khon, V. E. Panin

Результат исследований: Материалы для журналаСтатья

1 цитирование (Scopus)

Выдержка

An equation describing the time-dependent impurity distribution in a loaded crystal is derived on the basis of the concepts of highly excited states in a crystal. It is shown that a necessary condition for high mass transport rates to be achieved is a small difference between the energy of an atom in a highly excited state and the energy of the field of internal stresses. The simplest way for the stated conditions to be satisfied is by plastic deformation in a "pressure + shear" scheme.

Язык оригиналаАнглийский
Страницы (с-по)1969-1971
Число страниц3
ЖурналPhysics of the Solid State
Том38
Номер выпуска12
СостояниеОпубликовано - дек 1996

Отпечаток

Excited states
Mass transfer
shear
Crystals
plastic deformation
excitation
residual stress
crystals
Residual stresses
Plastic deformation
Impurities
impurities
Atoms
energy
atoms

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Цитировать

Anomalous mass transport in deformable materials under "pressure + shear" conditions. / Khon, Yu A.; Panin, V. E.

В: Physics of the Solid State, Том 38, № 12, 12.1996, стр. 1969-1971.

Результат исследований: Материалы для журналаСтатья

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