Ageing of SiC JFET transistors under repetitive current limitation conditions

M. Bouarroudj-Berkani, D. Othman, S. Lefebvre, S. Moumen, Z. Khatir, T. Ben Sallah

Результат исследований: Материалы для журналаСтатья

16 Цитирования (Scopus)

Аннотация

In power applications using normally on transistors, short circuit or current limitation modes can be recurrent during operation, especially when powering converters. So, studying the robustness of these devices under such severe condition is an important issue. The paper presents ageing tests of normally on SiC JFET prototype transistors from SiCED subjected to repetitive short circuit operations. Experimental tests are detailed and the evolution of electrical parameters during ageing is presented. Especially, the evolution during tests of ageing indicators like on-state resistance and saturation current is presented. Numerical investigations have been performed in order to estimate temperature during short circuit operation and to quantify the effect of the maximum temperature on the ageing process.

Язык оригиналаАнглийский
Страницы (с-по)1532-1537
Число страниц6
ЖурналMicroelectronics Reliability
Том50
Номер выпуска9-11
DOI
СостояниеОпубликовано - 1 сен 2010
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Цитировать

    Bouarroudj-Berkani, M., Othman, D., Lefebvre, S., Moumen, S., Khatir, Z., & Ben Sallah, T. (2010). Ageing of SiC JFET transistors under repetitive current limitation conditions. Microelectronics Reliability, 50(9-11), 1532-1537. https://doi.org/10.1016/j.microrel.2010.07.035