A thermal neutron detector based on single-crystalline silicon

V. A. Varlachev, E. S. Solodovnikov

Результат исследований: Материалы для журналаСтатья

1 цитирование (Scopus)

Выдержка

It is shown that a change in the specific electrical conductivity (SEC) in silicon single crystals after irradiation and radiation defect annealing is directly proportional to the thermal neutron fluence. This fact is used as a basis of a method for measuring the neutron flux. In this case, the proportionality factor is dependent on the neutron spectrum, being independent of the initial SEC, which significantly simplifies detector calibration. In measurements of the thermal neutron fluence in terms of relative and absolute units, the rms was 4 and 8%, respectively.

Язык оригиналаАнглийский
Страницы (с-по)342-344
Число страниц3
ЖурналInstruments and Experimental Techniques
Том52
Номер выпуска3
DOI
СостояниеОпубликовано - мая 2009

Отпечаток

Neutron detectors
neutron counters
thermal neutrons
Neutrons
fluence
Crystalline materials
Silicon
electrical resistivity
neutron spectra
silicon
flux (rate)
Neutron flux
irradiation
annealing
detectors
single crystals
defects
radiation
Irradiation
Single crystals

ASJC Scopus subject areas

  • Instrumentation

Цитировать

A thermal neutron detector based on single-crystalline silicon. / Varlachev, V. A.; Solodovnikov, E. S.

В: Instruments and Experimental Techniques, Том 52, № 3, 05.2009, стр. 342-344.

Результат исследований: Материалы для журналаСтатья

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