A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

S. Pietranico, S. Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps

Результат исследований: Материалы для журналаСтатья

29 Цитирования (Scopus)

Аннотация

The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on electrical performances of a power transistor. We have tried to link changes in electrical performances to metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization on electrical performances of tested devices.

Язык оригиналаАнглийский
Страницы (с-по)1824-1829
Число страниц6
ЖурналMicroelectronics Reliability
Том51
Номер выпуска9-11
DOI
СостояниеОпубликовано - 1 сен 2011
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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