A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules

T. A. Nguyen, D. Labrousse, P. Y. Joubert, S. Lefebvre, S. Bontemps

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Выдержка

The ageing of the metallization layer (aluminum reconstruction) which is due to power cycling on dies of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the local degradation of the aluminum sheet resistance due to power cycling which is evaluated by means of an eddy current sensor. First results of experimental data on power dies are presented for the first time.

Язык оригиналаАнглийский
Название основной публикацииProceedings - PCIM Europe 2012
Подзаголовок основной публикацииInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Страницы757-766
Число страниц10
СостояниеОпубликовано - 1 дек 2012
Опубликовано для внешнего пользованияДа
СобытиеInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 - Nuremberg, Германия
Продолжительность: 8 мая 201210 мая 2012

Серия публикаций

НазваниеPCIM Europe Conference Proceedings
ISSN (электронное издание)2191-3358

Конференция

КонференцияInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012
СтранаГермания
ГородNuremberg
Период8.5.1210.5.12

Отпечаток

Eddy currents
Semiconductor materials
Metallizing
Aluminum
Aluminum sheet
Sheet resistance
Insulated gate bipolar transistors (IGBT)
Current density
Aging of materials
Degradation
Sensors
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Цитировать

Nguyen, T. A., Labrousse, D., Joubert, P. Y., Lefebvre, S., & Bontemps, S. (2012). A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules. В Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (стр. 757-766). (PCIM Europe Conference Proceedings).

A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules. / Nguyen, T. A.; Labrousse, D.; Joubert, P. Y.; Lefebvre, S.; Bontemps, S.

Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. 2012. стр. 757-766 (PCIM Europe Conference Proceedings).

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Nguyen, TA, Labrousse, D, Joubert, PY, Lefebvre, S & Bontemps, S 2012, A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules. в Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. PCIM Europe Conference Proceedings, стр. 757-766, Nuremberg, Германия, 8.5.12.
Nguyen TA, Labrousse D, Joubert PY, Lefebvre S, Bontemps S. A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules. В Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. 2012. стр. 757-766. (PCIM Europe Conference Proceedings).
Nguyen, T. A. ; Labrousse, D. ; Joubert, P. Y. ; Lefebvre, S. ; Bontemps, S. / A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules. Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. 2012. стр. 757-766 (PCIM Europe Conference Proceedings).
@inproceedings{096370797d72413e925041421bbe0846,
title = "A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules",
abstract = "The ageing of the metallization layer (aluminum reconstruction) which is due to power cycling on dies of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the local degradation of the aluminum sheet resistance due to power cycling which is evaluated by means of an eddy current sensor. First results of experimental data on power dies are presented for the first time.",
author = "Nguyen, {T. A.} and D. Labrousse and Joubert, {P. Y.} and S. Lefebvre and S. Bontemps",
year = "2012",
month = "12",
day = "1",
language = "English",
isbn = "9783800734313",
series = "PCIM Europe Conference Proceedings",
pages = "757--766",
booktitle = "Proceedings - PCIM Europe 2012",

}

TY - GEN

T1 - A measure using the eddy current technique on the effect of aluminum reconstruction in power semiconductor modules

AU - Nguyen, T. A.

AU - Labrousse, D.

AU - Joubert, P. Y.

AU - Lefebvre, S.

AU - Bontemps, S.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The ageing of the metallization layer (aluminum reconstruction) which is due to power cycling on dies of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the local degradation of the aluminum sheet resistance due to power cycling which is evaluated by means of an eddy current sensor. First results of experimental data on power dies are presented for the first time.

AB - The ageing of the metallization layer (aluminum reconstruction) which is due to power cycling on dies of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the local degradation of the aluminum sheet resistance due to power cycling which is evaluated by means of an eddy current sensor. First results of experimental data on power dies are presented for the first time.

UR - http://www.scopus.com/inward/record.url?scp=84874153918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874153918&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84874153918

SN - 9783800734313

T3 - PCIM Europe Conference Proceedings

SP - 757

EP - 766

BT - Proceedings - PCIM Europe 2012

ER -