A fast-neutron detector based on single-crystalline silicon

V. A. Varlachev, E. S. Solodovnikov

Результат исследований: Материалы для журналаСтатьярецензирование


It is shown that the change of the specific electrical conductivity (SEC) of silicon single crystals in the process of their irradiation is directly proportional to the fast-neutron fluence. This is used as the basis of the principle of the neutron-flux detection. The coefficient of proportionality depends on the neutron spectrum, but does not depend on the initial SEC, which significantly simplifies detector calibration. A set of wafers with different SEC values has been manufactured using the technology silicon neutron-transmutation doping. The SEC has been measured by the four-probe method. A simple method for measuring the SEC without recourse to any special setup is proposed. The random measurement error of the fast-neutron fluence was ∼10%, and the absolute one was ∼37%.

Язык оригиналаАнглийский
Страницы (с-по)171-174
Число страниц4
ЖурналInstruments and Experimental Techniques
Номер выпуска2
СостояниеОпубликовано - мар 2008

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Instrumentation

Fingerprint Подробные сведения о темах исследования «A fast-neutron detector based on single-crystalline silicon». Вместе они формируют уникальный семантический отпечаток (fingerprint).