3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Michele Riccio, Vincenzo D'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy

Результат исследований: Материалы для журналаСтатья

2 Цитирования (Scopus)

Выдержка

Active cycling of power devices operated in harsh conditions causes high power dissipation, resulting in critical electrothermal and thermo-mechanical effects that may lead to catastrophic failures. This paper analyzes the ageing-induced degradation of the chip metallization of a power MOSFET and its impact on the device robustness during short-circuit and unclamped inductive switching tests. A 3-D electrothermal simulator relying on a full circuit representation of the whole device is used to predict the influence of various ageing levels. It is found that ageing can jeopardize the robustness of the transistor when subject to short-circuit conditions due to the exacerbated de-biasing effect on the gate-source voltage distribution; conversely, this mechanism does not arise under unclamped inductive switching conditions. This allows explaining the difference in time-to-failure experimentally observed for the transistors subject to these tests and dissipating the same energy.

Язык оригиналаАнглийский
Страницы (с-по)1845-1850
Число страниц6
ЖурналMicroelectronics Reliability
Том54
Номер выпуска9-10
DOI
СостояниеОпубликовано - 1 сен 2014
Опубликовано для внешнего пользованияДа

Отпечаток

short circuits
Short circuit currents
field effect transistors
Aging of materials
cycles
Transistors
transistors
simulation
Metallizing
simulators
Energy dissipation
dissipation
Simulators
chips
degradation
Degradation
Networks (circuits)
causes
Electric potential
electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Цитировать

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions. / Riccio, Michele; D'Alessandro, Vincenzo; Irace, Andrea; Rostaing, Gilles; Berkani, Mounira; Lefebvre, Stéphane; Dupuy, Philippe.

В: Microelectronics Reliability, Том 54, № 9-10, 01.09.2014, стр. 1845-1850.

Результат исследований: Материалы для журналаСтатья

Riccio, Michele ; D'Alessandro, Vincenzo ; Irace, Andrea ; Rostaing, Gilles ; Berkani, Mounira ; Lefebvre, Stéphane ; Dupuy, Philippe. / 3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions. В: Microelectronics Reliability. 2014 ; Том 54, № 9-10. стр. 1845-1850.
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abstract = "Active cycling of power devices operated in harsh conditions causes high power dissipation, resulting in critical electrothermal and thermo-mechanical effects that may lead to catastrophic failures. This paper analyzes the ageing-induced degradation of the chip metallization of a power MOSFET and its impact on the device robustness during short-circuit and unclamped inductive switching tests. A 3-D electrothermal simulator relying on a full circuit representation of the whole device is used to predict the influence of various ageing levels. It is found that ageing can jeopardize the robustness of the transistor when subject to short-circuit conditions due to the exacerbated de-biasing effect on the gate-source voltage distribution; conversely, this mechanism does not arise under unclamped inductive switching conditions. This allows explaining the difference in time-to-failure experimentally observed for the transistors subject to these tests and dissipating the same energy.",
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AU - Riccio, Michele

AU - D'Alessandro, Vincenzo

AU - Irace, Andrea

AU - Rostaing, Gilles

AU - Berkani, Mounira

AU - Lefebvre, Stéphane

AU - Dupuy, Philippe

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AB - Active cycling of power devices operated in harsh conditions causes high power dissipation, resulting in critical electrothermal and thermo-mechanical effects that may lead to catastrophic failures. This paper analyzes the ageing-induced degradation of the chip metallization of a power MOSFET and its impact on the device robustness during short-circuit and unclamped inductive switching tests. A 3-D electrothermal simulator relying on a full circuit representation of the whole device is used to predict the influence of various ageing levels. It is found that ageing can jeopardize the robustness of the transistor when subject to short-circuit conditions due to the exacerbated de-biasing effect on the gate-source voltage distribution; conversely, this mechanism does not arise under unclamped inductive switching conditions. This allows explaining the difference in time-to-failure experimentally observed for the transistors subject to these tests and dissipating the same energy.

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KW - Ageing effects

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