Abstract
The energy absorbed in thin films of selected materials bombarded by x rays emitted in the braking of low-energy electrons (E0<500keV) in converters with various atomic numbers (Z=29-73) is calculated by the Monte Carlo method. The program takes into account both of the K-shell ionization mechanisms that lead to emission of characteristic photons as a result of electron impact and as a result of the photoelectric effect, and the characteristic radiation is shown to make a large contribution to the absorbed energy in thin films. Calculations show that the proper choice of material and thickness of the converter affords a two- to fivefold increase in the energy of the x radiation absorbed in thin films of semiconductor materials.
| Original language | English |
|---|---|
| Pages (from-to) | 1363-1365 |
| Number of pages | 3 |
| Journal | Technical Physics |
| Volume | 43 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1998 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
X-ray converters for radiation treatment of thin films. / Bespalov, V. I.; Ryzhov, V. V.; Turchanovskiǐ, I. Yu.
In: Technical Physics, Vol. 43, No. 11, 1998, p. 1363-1365.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - X-ray converters for radiation treatment of thin films
AU - Bespalov, V. I.
AU - Ryzhov, V. V.
AU - Turchanovskiǐ, I. Yu
PY - 1998
Y1 - 1998
N2 - The energy absorbed in thin films of selected materials bombarded by x rays emitted in the braking of low-energy electrons (E0<500keV) in converters with various atomic numbers (Z=29-73) is calculated by the Monte Carlo method. The program takes into account both of the K-shell ionization mechanisms that lead to emission of characteristic photons as a result of electron impact and as a result of the photoelectric effect, and the characteristic radiation is shown to make a large contribution to the absorbed energy in thin films. Calculations show that the proper choice of material and thickness of the converter affords a two- to fivefold increase in the energy of the x radiation absorbed in thin films of semiconductor materials.
AB - The energy absorbed in thin films of selected materials bombarded by x rays emitted in the braking of low-energy electrons (E0<500keV) in converters with various atomic numbers (Z=29-73) is calculated by the Monte Carlo method. The program takes into account both of the K-shell ionization mechanisms that lead to emission of characteristic photons as a result of electron impact and as a result of the photoelectric effect, and the characteristic radiation is shown to make a large contribution to the absorbed energy in thin films. Calculations show that the proper choice of material and thickness of the converter affords a two- to fivefold increase in the energy of the x radiation absorbed in thin films of semiconductor materials.
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UR - http://www.scopus.com/inward/citedby.url?scp=0032339957&partnerID=8YFLogxK
U2 - 10.1134/1.1259200
DO - 10.1134/1.1259200
M3 - Article
VL - 43
SP - 1363
EP - 1365
JO - Technical Physics
JF - Technical Physics
SN - 1063-7842
IS - 11
ER -