The energy absorbed in thin films of selected materials bombarded by x rays emitted in the braking of low-energy electrons (E0<500keV) in converters with various atomic numbers (Z=29-73) is calculated by the Monte Carlo method. The program takes into account both of the K-shell ionization mechanisms that lead to emission of characteristic photons as a result of electron impact and as a result of the photoelectric effect, and the characteristic radiation is shown to make a large contribution to the absorbed energy in thin films. Calculations show that the proper choice of material and thickness of the converter affords a two- to fivefold increase in the energy of the x radiation absorbed in thin films of semiconductor materials.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)